Electromigration modeling and layout optimization for advanced VLSI
Electromigration (EM) is a critical problem for interconnect reliability in advanced VLSI design. Because EM is a strong function of current density, a smaller cross-sectional area of interconnects can degrade the EM-related lifetime of IC, which is expected to become more severe in future technolog...
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| Format: | Others |
| Language: | en |
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2015
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| Online Access: | http://hdl.handle.net/2152/30944 |