MBE growth of GaSb-based alloys for mid-infrared semiconductor diode lasers
Mid-infrared lasers in the 3-5 µm range are important for wide variety of applications including trace gas sensing, infrared counter measures, free space optical communications, etc. GaSb-based type-I quantum well (QW) diode lasers are an attractive choice due to their relatively simple design and g...
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| Format: | Others |
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2015
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| Online Access: | http://hdl.handle.net/2152/28710 |