Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3
The topological insulator Bi2Te3 has been grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Reflection high energy electron diffraction, in situ scanning tunnelling microscopy, x-ray photoelectron spectroscopy and ex situ x-ray diffraction studies have been performed to analyze the quality...
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| Format: | Others |
| Language: | en |
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2014
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| Online Access: | http://hdl.handle.net/2152/26012 |