Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) SiO₂ and high-k gate dielectrics

Compact gate capacitance and gate current modeling of ultra-thin (EOT ~ 1 nm and below) SiO₂ and high-k gate dielectrics

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Bibliographic Details
Main Author: Li, Fei, 1972-
Format: Others
Language:English
Published: 2008
Subjects:
Dielectrics
Electrodes
Integrated circuits > Ultra large scale integration
Metal oxide semiconductors
Silicon oxide
Hafnium oxide
Online Access:http://hdl.handle.net/2152/2565

Internet

http://hdl.handle.net/2152/2565

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