Design of radix 4 divirs using high redundancy in 65 nanometer CMOS technology

Design of radix 4 divirs using high redundancy in 65 nanometer CMOS technology

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Bibliographic Details
Main Author: Pham, Tung Nang
Format: Others
Language:English
Published: 2008
Subjects:
Integrated circuits > Design and construction
Online Access:http://hdl.handle.net/2152/2363

Internet

http://hdl.handle.net/2152/2363

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