Metal-oxide-semiconductor devices based on epitaxial germanium layers grown selectively directly on silicon substrates by ultra-high-vacuum chemical vapor deposition
This document details experiments attempting to increase the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs) which are the mainstay of the semiconductor industry. Replacing the silicon channel with an ultra-thin epitaxial germanium layer grown selectively on a silicon (10...
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| Format: | Others |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/2152/18388 |