III-V channel MOS devices with atomic-layer-deposited high-k gate dielectrics : interface and carrier transport studies
The performance scaling of metal-oxide-semiconductor field-effect-transistors (MOSFETs) has been historically achieved through shrinking the gate length of transistors for over four decades. Addressing the current challenges with CMOS scaling, the 2005 edition of International Technology Roadmap for...
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| Format: | Others |
| Language: | English |
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2012
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| Online Access: | http://hdl.handle.net/2152/18264 |