Reliability Analysis of Nanocrystal Embedded High-k Nonvolatile Memories
The evolution of the MOSFET technology has been driven by the aggressive shrinkage of the device size to improve the device performance and to increase the circuit density. Currently, many research demonstrated that the continuous polycrystalline silicon film in the floating-gate dielectric could be...
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| Format: | Others |
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Trace: Tennessee Research and Creative Exchange
2011
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| Online Access: | http://trace.tennessee.edu/utk_graddiss/1242 |