Growth of 3C-SiC via a hot-wall CVD reactor
The heteroepitaxial growth of cubic silicon carbide (3C-SiC) on silicon (Si) substrates at high growth rates, via a horizontal hot-wall chemical vapor deposition (CVD) reactor, has been achieved. The final growth process was developed in three stages; an initial "baseline" development stag...
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| Format: | Others |
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Scholar Commons
2006
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| Online Access: | http://scholarcommons.usf.edu/etd/2552 http://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=3551&context=etd |