Non-Contact Characterization of Dielectric Conduction on 4H-SiC
Consistent charge or defect control in oxide grown on silicon carbide (SiC) continues to be difficult to achieve and directly impacts the electrical performance of SiC-based metal oxide semiconductor (MOS) devices. This research applied non-contact Corona-Kelvin metrology to investigate the charge t...
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| Format: | Others |
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Scholar Commons
2009
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| Online Access: | https://scholarcommons.usf.edu/etd/1852 https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2851&context=etd |