Excess noise in n-type hydrogenated amorphous silicon
Recently, there has been much uncertainty and controversy concerning various aspects of the behaviour of the excess noise in n-type a-Si:H known as 1/f or flicker noise. Conductance fluctuations have been measured in an n-type a-Si:H device. These fluctuations were measured for current densities in...
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en |
| Published: |
University of Saskatchewan
1997
|
| Online Access: | http://library.usask.ca/theses/available/etd-10212004-000106 |