Design and Characterization of RF-Power LDMOS Transistors

Design and Characterization of RF-Power LDMOS Transistors

In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. Power amplifiers in the base-stations that simultaneously handle these wideband signals for many terminals (handhelds)...

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Bibliographic Details
Main Author: Bengtsson, Olof
Format: Doctoral Thesis
Language:English
Published: Uppsala universitet, Fasta tillståndets elektronik 2008
Subjects:
Power Amplifiers
LDMOS transistors
RF-power
IMD
Technology CAD
Load-Pull
Electronics
Elektronik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-9259
http://nbn-resolving.de/urn:isbn:978-91-554-7269-6

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-9259
http://nbn-resolving.de/urn:isbn:978-91-554-7269-6

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