AlN and High-k Thin Films for IC and Electroacoustic Applications
Further, a highly selective dry etch process for etching Al on AlN has been developed for the fabrication of MIM, MIS, SAW and BAW test structures for electrical and electroacoustic characterization of the films. A dielectric constant of 10 for AlN and 25 for Ti doped Ta2O5 have been measured. With...
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| Format: | Doctoral Thesis |
| Language: | English |
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Uppsala universitet, Fasta tillståndets elektronik
2002
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-2682 http://nbn-resolving.de/urn:isbn:91-554-5421-6 |