CVD and ALD of Group IV- and V-Oxides for Dielectric Applications
Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and haf...
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| Format: | Doctoral Thesis |
| Language: | English |
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Uppsala universitet, Institutionen för materialkemi
2001
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-1415 http://nbn-resolving.de/urn:isbn:91-554-5143-8 |