Gate driver design for normally-off SiC JFET : Silicon Carbide technology for PV inverters
In this thesis a research on modern SiC semiconductor devices is made with a bias on the driving methods and requirements. A compact two-stage gate driver circuit for SiC VJFET is developed, the transistor is characterized and its gate requirements are estimated. The performance of developed driver...
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| Format: | Others |
| Language: | English |
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Norges teknisk-naturvitenskapelige universitet, Institutt for elkraftteknikk
2011
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-13698 |