The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

• Main Authors: Kakanakova-Georgieva, Anelia, Nilsson, Daniel, Trinh, Xuan Thang, Forsberg, Urban, Nguyen, Son Tien, Janzén, Erik
• Format: Others
• Language: English
• Published: Linköpings universitet, Halvledarmaterial 2013
• Subjects: aluminium compounds; electrical conductivity; gallium compounds; III-V semiconductors; impurity states; oxygen; paramagnetic resonance; silicon; wide band gap semiconductors
• Online Access: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91731

Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth rate, and (ii) electron paramagnetic resonance measurements. The Al0.77Ga0.23N composition correlates to that Al content for which a drastic reduction of the conductivity of AlxGa1−xN is commonly reported. We note the incorporation of carbon, the role of which for the transport properties of AlxGa1−xN has not been widely discussed.