The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Issues of major relevance to the n-type conductivity of Al0.77Ga0.23N associated with Si and O incorporation, their shallow donor or deep donor level behavior, and carrier compensation are elucidated by allying (i) study of Si and O incorporation kinetics at high process temperature and low growth r...

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Bibliographic Details
Main Authors: Kakanakova-Georgieva, Anelia, Nilsson, Daniel, Trinh, Xuan Thang, Forsberg, Urban, Nguyen, Son Tien, Janzén, Erik
Format: Others
Language:English
Published: Linköpings universitet, Halvledarmaterial 2013
Subjects:
aluminium compounds
electrical conductivity
gallium compounds
III-V semiconductors
impurity states
oxygen
paramagnetic resonance
silicon
wide band gap semiconductors
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91731

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91731

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