Growth and characterization of graphene on 4H-SiC(0001)
Thermal annealing 4H-SiC(0001) substrates to produce epitaxial graphene on Si-terminated SiC was performed using five different procedures, i.e. direct and indirect current heating at different based pressures and a temperature of about 1300 . The aim is to study the effects of graphene growth under...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | English |
| Published: |
Linköpings universitet, Halvledarmaterial
2012
|
| Subjects: | |
| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-82014 |