Controlled growth of hexagonal GaN pyramids and InGaN QDs
Gallium-nitride (GaN) and its related alloys are direct band gap semiconductors, with a wide variety of applications. The white light emitting diode (LED) is of particular importance as it is expected to replace energy inefficient light bulb and hazardous incandescent lamps used today. However, toda...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2012
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-79326 http://nbn-resolving.de/urn:isbn:978-91-7519-842-2 |