Low Power Gain Cell Arrays: Voltage Scaling and Leakage Reduction
In this thesis, a fully logic - compatible Gain - Cell (GC) based Dynamic - Random - Access (DRAM) with a storage capacity of 2048 bit is designed in UMC – 180 nm technology. The GC used is a two transistor PMOS (2PMOS) cell. This thesis aims at building the foundation for further research on the ef...
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Format: | Others |
Language: | English |
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Linköpings universitet, Elektroniksystem
2012
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73970 |