Advances in SiC growth using chloride-based CVD
Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. I...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2010
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-60226 http://nbn-resolving.de/urn:isbn:978-91-7393-303-2 |