Near-infrared photodetectors based on Si/SiGe nanostructures

Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain hig...

Full description

Bibliographic Details
Main Author: Elfving, Anders
Format: Doctoral Thesis
Language:English
Published: Linköpings universitet, Yt- och Halvledarfysik 2006
Subjects:
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909
http://nbn-resolving.de/urn:isbn:91-85497-24-X