Near-infrared photodetectors based on Si/SiGe nanostructures
Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain hig...
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Format: | Doctoral Thesis |
Language: | English |
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Linköpings universitet, Yt- och Halvledarfysik
2006
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909 http://nbn-resolving.de/urn:isbn:91-85497-24-X |