Microwave Power Devices and Amplifiers for Radars and Communication Systems
SiC MESFETs and GaN HEMTs posses an enormous potential in power amplifiers at microwave frequencies due to their wide bandgap features of high electric field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Halvledarmaterial
2009
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-19267 http://nbn-resolving.de/urn:isbn:9789173935760 |