Transmission electron microscopy study on the formation of SiNX interlayer during InAlN growth on Si (111) substrate
Ternary indium aluminum nitride (InXAl1-XN) semiconductor is an attractive material with a wide-range bandgap energy varied from ultraviolet (Eg(AlN): 6.2 eV) to near infrared (Eg(InN): 0.7 eV). With tuning composition, it can be widely used to many optoelectronic device applications. In this thesis...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Tunnfilmsfysik
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-125472 |