Numerical Simulation of Temperature and Velocity Profiles in a Horizontal CVD-reactor

• Main Author: Randell, Per
• Format: Others
• Language: English
• Published: Linköpings universitet, Mekanisk värmeteori och strömningslära 2014
• Subjects: horizontal hot-walled CVD-reactor CVD reactor Silicon Carbide SiC numerical simulation CFD conjugate heat transfer temperature velocity induction
• Online Access: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117942

Silicon Carbide (SiC) has the potential to significantly improve electronics. As a material, it can conduct heat better, carry larger currents and can give faster responses compared to today’s technologies. One way to produce SiC for use in electronics is by growing a thin layer in a CVD-reactor (chemical vapour deposition). A CVD-reactor leads a carrier gas with small parts of active gas into a heated chamber (susceptor). The gas is then rapidly heated to high temperatures and chemical reactions occur. These new chemical substances can then deposit on the substrate surface and grow a SiC layer. This thesis investigates the effect of different opening angles on a susceptor inlet in a SiC horizontal hot-walled CVD-reactor at Linköping University. The susceptor inlet affects both the flow and heat transfer and therefore has an impact on the conditions over the substrate. A fast temperature rise in the gas as close to the substrate as possible is desired. Even temperaturegradients vertically over the substrate and laminar flow is desired. The CVD-reactor is modeled with conjugate heat transfer using CFD simulations for three different angles of the inlet. The results show that the opening angle mainly affects the temperature gradient over the substrate and that a wider opening angle will cause a greater gradient. The opening angle will have little effect on the temperature of the satellite and substrate.