Numerical Simulation of Temperature and Velocity Profiles in a Horizontal CVD-reactor

Numerical Simulation of Temperature and Velocity Profiles in a Horizontal CVD-reactor

Silicon Carbide (SiC) has the potential to significantly improve electronics. As a material, it can conduct heat better, carry larger currents and can give faster responses compared to today’s technologies. One way to produce SiC for use in electronics is by growing a thin layer in a CVD-reactor (che...

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Bibliographic Details
Main Author: Randell, Per
Format: Others
Language:English
Published: Linköpings universitet, Mekanisk värmeteori och strömningslära 2014
Subjects:
horizontal hot-walled CVD-reactor CVD reactor Silicon Carbide SiC numerical simulation CFD conjugate heat transfer temperature velocity induction
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117942

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http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-117942

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