Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes
SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably h...
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| Format: | Others |
| Language: | English |
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Linköpings universitet, Materiefysik
2008
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11786 http://nbn-resolving.de/urn:isbn:978-91-7393-855-6 |