Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy
The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. the so-called “strain engineering”, have become a ver...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Yt- och Halvledarfysik
2008
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11746 http://nbn-resolving.de/urn:isbn:978-91-7393-911-9 |