Growth and characterization of SiC and GaN
At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-q...
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| Format: | Doctoral Thesis |
| Language: | English |
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Linköpings universitet, Materiefysik
2007
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-10314 http://nbn-resolving.de/urn:isbn:978-91-85895-26-7 |