Growth and characterization of SiC and GaN

Growth and characterization of SiC and GaN

At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. High-q...

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Bibliographic Details
Main Author: Ciechonski, Rafal
Format: Doctoral Thesis
Language:English
Published: Linköpings universitet, Materiefysik 2007
Subjects:
SiC
GaN
Deep level transient spectroscopy
Minority Carrier Transient Spectroscopy
Hall effect
Cathodoluminescence
Scanning electron microscopy
Atomic Force microscopy
sublimation growth
MOCVD
heterostructures
High Electron Mobility transistor
point defects
Material physics with surface physics
Materialfysik med ytfysik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-10314
http://nbn-resolving.de/urn:isbn:978-91-85895-26-7

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-10314
http://nbn-resolving.de/urn:isbn:978-91-85895-26-7

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