Excitonic Effects and Energy Upconversion in Bulk and Nanostructured ZnO
Zinc Oxide (ZnO), a II-VI wurtzite semiconductor, has been drawing enormous research interest for decades as an electronic material for numerous applications. It has a wide and direct band gap of 3.37eV and a large exciton binding energy of 60 meV that leads to intense free exciton (FX) emission at...
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Format: | Doctoral Thesis |
Language: | English |
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Linköpings universitet, Funktionella elektroniska material
2014
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-102594 http://nbn-resolving.de/urn:isbn:978-91-7519-464-6 |