Impact of Ionizing Radiation on 4H-SiC Devices
Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap a...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Integrerade komponenter och kretsar
2012
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763 http://nbn-resolving.de/urn:isbn:978-91-7501-225-4 |