High-Power Modular Multilevel Converters With SiC JFETs

High-Power Modular Multilevel Converters With SiC JFETs

This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar tr...

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Bibliographic Details
Main Authors: Peftitsis, Dimosthenis, Tolstoy, Georg, Antonopoulos, Antonios, Rabkowski, Jacek, Lim, Jang-Kwon, Bakowski, Mietek, Ängquist, Lennart, Nee, Hans-Peter
Format: Others
Language:English
Published: KTH, Elektrisk energiomvandling 2012
Subjects:
Diodeless operation
high voltage directcurrent transmission
modular multilevel converter
SiC JFETs
silicon carbide
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52687

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-52687

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