Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limi...

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Bibliographic Details
Main Author: Zhang, Zhen
Format: Doctoral Thesis
Language:English
Published: KTH, Integrerade komponenter och kretsar 2008
Subjects:
CMOS technology
MOSFET
FinFET
Schottky diode
Schottky barrier soure/drain
silicide
SALICIDE
SOI
multiple-gate
nanowire
sidewall transfer lithography
Electronics
Elektronik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4628

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-4628

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