Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors
A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och Informationsteknik, IMIT
2006
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3888 |