Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect...

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Bibliographic Details
Main Author: von Haartman, Martin
Format: Doctoral Thesis
Language:English
Published: KTH, Mikroelektronik och Informationsteknik, IMIT 2006
Subjects:
MOSFET
SOI
SiGe
strain
high-k
metal gate
1/f noise
low-frequency noise
mobility fluctuations
phonons
number fluctuations
traps
buried channel
mobility
substrate bias
Electronics
Elektronik
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3888

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3888

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