Device design and process integration for SiGeC and Si/SOI bipolar transistors
SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. This thesis focuseson new m...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2004
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3836 |