Device design and process integration for SiGeC and Si/SOI bipolar transistors

Device design and process integration for SiGeC and Si/SOI bipolar transistors

SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. This thesis focuseson new m...

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Bibliographic Details
Main Author: Haralson, Erik
Format: Doctoral Thesis
Language:English
Published: KTH, Mikroelektronik och informationsteknik, IMIT 2004
Subjects:
Silicon-Germanium(SiGe)
SiGeC
heterojunction bipolar transistor(HBT)
nickel silicide
selectively implanted collector(SIC)
device simulation
SiGeC layer staiblity
high resolution x-ray diffraction(HRXRD)
silicon-on.insulator(SOI)
self-heating
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3836

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http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3836

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