Modeling and characterization of novel MOS devices
Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examin...
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Format: | Doctoral Thesis |
Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2004
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3720 |