Modeling and characterization of novel MOS devices

Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examin...

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Bibliographic Details
Main Author: Persson, Stefan
Format: Doctoral Thesis
Language:English
Published: KTH, Mikroelektronik och informationsteknik, IMIT 2004
Subjects:
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3720