Design, Processing and Characterization of Silicon Carbide Diodes
Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3.2eV, high thermal conductivity, itsmechanical and chemical stability and a high critical electricfie...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Mikroelektronik och informationsteknik, IMIT
2003
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3471 http://nbn-resolving.de/urn:isbn: |