Time Resolved Micro Photoluminescence of InGaN/GaN Quantum Dots
Time resolved micro photoluminescence of InGaN/GaN quantum dots has been investigated, together with power dependence and polarization measurements. The quantum dots are formed at the top of selectively grown GaN pyramids on a 4H-SiC substrate. Decay time constants in the range of 400 ps to 1.1 ns h...
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| Format: | Others |
| Language: | English |
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KTH, Skolan för informations- och kommunikationsteknik (ICT)
2011
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-32364 |