Characterization of GaNbased HEMTs for power electronics

Characterization of GaNbased HEMTs for power electronics

Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. In t...

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Bibliographic Details
Main Author: Liang, Xiaomin
Format: Others
Language:English
Published: KTH, Skolan för elektroteknik och datavetenskap (EECS) 2020
Subjects:
Gallium nitride
high electron mobility transistor
gate designs
power electronics
Other Computer and Information Science
Annan data- och informationsvetenskap
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284144

Internet

http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284144

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