The reactive formation of TiSi<SUB>2</SUB>in the presence of refractory metals

Titanium disilicide (TiSi2) has been the favoured material for contactmetallisation in recent Si devices. The formation of TiSi2usually begins with the high resistivity C49 phaseas a result of the Ti-Si interaction at about 300-550 °Cand finishes with the low resistivity C54 phase through theC49-C54...

Full description

Bibliographic Details
Main Author: Mouroux, Aliette
Format: Doctoral Thesis
Language:English
Published: KTH, Elektroniksystemkonstruktion 1999
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2807
http://nbn-resolving.de/urn:isbn:99-2962958-0

Similar Items