The reactive formation of TiSi<SUB>2</SUB>in the presence of refractory metals
Titanium disilicide (TiSi2) has been the favoured material for contactmetallisation in recent Si devices. The formation of TiSi2usually begins with the high resistivity C49 phaseas a result of the Ti-Si interaction at about 300-550 °Cand finishes with the low resistivity C54 phase through theC49-C54...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Elektroniksystemkonstruktion
1999
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2807 http://nbn-resolving.de/urn:isbn:99-2962958-0 |