Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs
Silicon carbide (SIC) is a wide bandgap semiconductor thathas been suggested as a replacement for silicon in applicationsusing high voltages, high frequencies, high temperatures orcombinations thereof. Several basic process steps need to bedeveloped for reliable manufacturing of long-term stableelec...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Elektroniksystemkonstruktion
1997
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2514 http://nbn-resolving.de/urn:isbn:99-2417984-6 |