Silicon Carbide Technology for High- and Ultra-High-Voltage Bipolar Junction Transistors and PiN Diodes
Silicon carbide (SiC) is an attractive material for high-voltage and high-temperature electronic applications owing to the wide bandgap, high critical electric field, and high thermal conductivity. High- and ultra-high-voltage silicon carbide bipolar devices, such as bipolar junction transistors (BJ...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Integrerade komponenter och kretsar
2017
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-197913 http://nbn-resolving.de/urn:isbn:978-91-7729-183-1 |