High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. Fr...
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| Format: | Doctoral Thesis |
| Language: | English |
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KTH, Elektrisk energiomvandling
2015
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-168163 http://nbn-resolving.de/urn:isbn:978-91-7595-601-5 |