On Gate Drivers and Applications of Normally-ON SiC JFETs

In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterpart...

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Bibliographic Details
Main Author: Peftitsis, Dimosthenis
Format: Doctoral Thesis
Language:English
Published: KTH, Elektrisk energiomvandling 2013
Subjects:
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122679
http://nbn-resolving.de/urn:isbn:978-91-7501-799-0