On Gate Drivers and Applications of Normally-ON SiC JFETs
In this thesis, various issues regarding normally-ON silicon carbide (SiC)Junction Field-Effect Transistors (JFETs) are treated. Silicon carbide powersemiconductor devices are able to operate at higher switching frequencies,higher efficiencies, and higher temperatures compared to silicon counterpart...
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Format: | Doctoral Thesis |
Language: | English |
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KTH, Elektrisk energiomvandling
2013
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Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122679 http://nbn-resolving.de/urn:isbn:978-91-7501-799-0 |