Silicon/Germanium Molecular Beam Epitaxy
Molecular Beam Epitaxy (MBE) is a well-established method to grow low-dimensional structures for research applications. MBE has given many contributions to the rapid expanding research-area of nano-technology and will probably continuing doing so. The MBE equipment, dedicated for Silicon/Germanium (...
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| Format: | Others |
| Language: | English |
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Karlstads universitet, Institutionen för ingenjörsvetenskap, fysik och matematik
2006
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:kau:diva-146 |