Monte Carlo studies of ionized impurity scattering in silicon and silicon-germanium alloys
An improved Monte Carlo model for ionized impurity scattering is developed and applied to transport problems in Si and the Si$\sb{1-x}$Ge$\sb x$ alloy system. The model includes scattering cross sections derived from phase-shift analysis, implementation of the Friedel Sum Rule, and a simple phenomol...
| Main Author: | |
|---|---|
| Language: | ENG |
| Published: |
ScholarWorks@UMass Amherst
1991
|
| Subjects: | |
| Online Access: | https://scholarworks.umass.edu/dissertations/AAI9120900 |